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2SA715 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2SA715
Description  isc Silicon PNP Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SA715 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SA715
DESCRIPTION
·Good Linearity of hFE
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -35V (Min)
·Complement to Type 2SC1162
APPLICATIONS
·Designed for use in low frequency power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-35
V
VCEO
Collector-Emitter Voltage
-35
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current-Continuous
-2.5
A
ICM
Collector Current-Peak
-3.0
A
Collector Power Dissipation
@ Ta=25℃
0.75
PC
Total Power Dissipation
@ TC=25℃
10
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn


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