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2SA489 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA489 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA489 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ,IB=0 -60 V V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -70 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.0 V VBEsat Base-emitter saturation voltage IC=-3A; IB=-0.3A -1.5 V ICBO Collector cut-off current VCB=-70V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE DC current gain IC=-0.5A ; VCE=-5V 40 240 fT Transition frequency IC=-0.5A ; VCE=-5V 3 MHz hFE Classifications R O Y 40-80 70-140 120-240 2 |
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