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2SA1008 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA1008 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 5 page  Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1008 DESCRIPTION ·With TO-220 package ·Complement to type 2SC2331 ·Low collector saturation voltage Fig.1 simplified outline (TO-220) and symbol ·Fast switching speed APPLICATIONS ·Switching regulators ·DC/DC converters ·High frequency power amplifiers PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -2.0 A ICM Collector current-Peak -4.0 A IB B Base current -1.0 A Ta=25℃ 1.5 PT Total power dissipation TC=25℃ 15 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ |
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