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2SA1280 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1280 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page  Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1280 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IB=0 B -150 V VCEsat Collector-emitter saturation voltage IC=-500mA;IB=-50mA -3.0 V VBE Base-emitter on voltage IC=-50mA ; VCE=-4V -1.0 V ICBO Collector cut-off current VCB=-120V;IE=0 -1 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -1 μA hFE-1 DC current gain IC=-50mA ; VCE=-4V 60 200 hFE-2 DC current gain IC=-500mA ; VCE=-10V 60 fT Transition frequency IC=-500mA ; VCE=-10V 4 MHz COB Output capacitance IE=0 ; VCB=-100V;f=1MHz 30 pF 2 |
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