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2SC2408 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC2408 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page  INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2408 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 20V; IE= 0 0.5 μA IEBO Emitter Cutoff Current VEB= 2V; IC= 0 0.5 μA hFE DC Current Gain IC= 50mA ; VCE= 10V 30 200 fT Current-Gain—Bandwidth Product IC= 50mA ; VCE= 10V 3.5 GHz COB Output Capacitance IE= 0 ; VCB= 10V; f= 1.0MHz 1.25 2.0 pF ︱S21e︱ 2 Insertion Power Gain IC= 50mA ; VCE= 10V; f= 200MHz; RG = 50Ω 18 21 dB NF Noise Figure IC= 30mA ; VCE= 10V; f= 200MHz; RG = 50Ω 2.4 4.0 dB isc Website：www.iscsemi.cn 2 |
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