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2SA1633 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1633 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page  Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1633 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; IB=0 -150 V VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A B -1.5 V VBEsat Base-emitter saturation voltage IC=-5A ;IB=-0.5A B -2.0 V ICBO Collector cut-off current VCB=-150V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-6V; IC=0 -0.1 mA hFE DC current gain IC=-1A ; VCE=-5V 60 320 fT Transition frequency IC=-1A ; VCE=-10V 20 MHz hFE Classifications D E F 60-120 100-200 160-320 2 |
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