2SB1079 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

2SB1079

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= -200mA, RBE= ∞

-100

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -25mA, RBE= ∞

-100

V(BR)CBO

Collector-Base Breakdown Voltage

IC= -0.1mA ,IE= 0

-100

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= -50mA ,IC= 0

-7

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= -10A ,IB= -20mA

-2.0

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= -20A ,IB= -200mA

-3.0

VBE(sat)-1

Base-Emitter Saturation Voltage

IC= -10A ,IB= -20mA

-2.5

VBE(sat)-2

Base-Emitter Saturation Voltage

IC= -20A ,IB= -200mA

-3.5

ICBO

Collector Cutoff current

VCB= -100V, IE= 0

-0.1

ICEO

Collector Cutoff current

VCE= -80V, RBE= ∞

-1.0

hFE

DC Current Gain

IC= -10A ; VCE= -3V

1000

Switching Times

ton

Turn-on Time

0.6

μs

tstg

Storage Time

IC= -10 A,

IB1 = -IB2 = -20 mA;

3.5

μs

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