KSC5338 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

KSC5338

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CBO

Collector-Base Breakdown Voltage

IC= 1mA; IE= 0

1000

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 5mA; IB= 0

450

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 1mA; IC= 0

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 1A; IB= 0.1A

0.8

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 2A; IB= 0.4A

0.5

VBE(sat)-1

Base-Emitter Saturation Voltage

IC= 1A; IB= 0.1A

1.1

VBE(sat)-2

Base-Emitter Saturation Voltage

IC= 2A; IB= 0.4A

1.25

ICBO

Collector Cutoff Current

VCB= 800V; VBE= 0

μA

IEBO

Emitter Cutoff Current

VEB= 9V; IC=0

μA

hFE-1

DC Current Gain

IC= 0.5A; VCE= 5V

hFE-2

DC Current Gain

IC= 2A; VCE= 1V

COB

Output Capacitance

IE= 0; VCB= 10V; ftest= 0.1MHz

Current-Gain—Bandwidth Product

IC= 0.1A ;VCE= 6V

MHz

Switching Times

ton

Turn-On Time

0.2

μs

Storage Time

2.0

μs

Fall Time

IC= 1A; IB1= -IB2=0.2A;

VCC= 125V

0.5

μs

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