KSC5367 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

KSC5367

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CBO

Collector-Base Breakdown Voltage

IC= 1mA; IE= 0

1600

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 5mA; IB= 0

800

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 1mA; IC= 0

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 0.25A; IB= 25mA

2.5

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 0.5A; IB= 50mA

4.5

VCE(sat)-3

Collector-Emitter Saturation Voltage

IC= 1A; IB= 0.2A

2.5

VBE(sat)

Base-Emitter Saturation Voltage

IC= 3A; IB= 0.6A

1.5

ICBO

Collector Cutoff Current

VCB= 1600V; IE= 0

μA

IEBO

Emitter Cutoff Current

VEB= 12V; IC=0

μA

hFE-1

DC Current Gain

IC= 0.4A; VCE= 3V

hFE-2

DC Current Gain

IC= 5mA; VCE= 10V

COB

Output Capacitance

IE= 0; VCB= 10V; ftest= 1MHz

Switching Times

ton

Turn-On Time

0.5

μs

Storage Time

2.2

μs

Fall Time

IC= 0.5A; IB1= 42mA;

IB2= -333mA;VCC= 125V

0.5

μs

ton

Turn-On Time

0.5

μs

Storage Time

4.0

μs

Fall Time

IC= 1A; IB1= 0.2A;

IB2= -0.4A;VCC= 250V

0.5

μs

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