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2N6322 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 2N6322
Description  Silicon NPN Power Transistors
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6322 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2N6322 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N6322 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2N6322 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2N6322
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdwon voltage
IC=30mA ;IB=0
200
V
V(BR)CBO
Collector-base breakdwon voltage
IC=2m A ;IE=0
300
V
V(BR)EBO
Emitter-base breakdwon voltage
IE=2m A ;IC=0
5
V
VCEsat-1
Collector-emitter saturation voltage
IC=20A ;IB=2A
1.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=30A; IB=6A
3.0
V
VBE
Base-emitter on voltage
IC=30A ; VCE=5V
2.5
V
ICEO
Collector cut-off current
VCE=100V; IB=0
2.0
mA
ICES
Collector cut-off current
VCE=300V; VBE=0
20
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
20
μA
hFE-1
DC current gain
IC=5A ; VCE=5V
40
150
hFE-2
DC current gain
IC=20A ; VCE=5V
12
hFE-3
DC current gain
IC=30A ; VCE=5V
6
fT
Transition frequency
IC=1A ; VCE=10V
10
MHz



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