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2N6476 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2N6476
Description  Silicon PNP Power Transistors
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6476 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2N6475 2N6476
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·Excellent safe operating area
APPLICATIONS
·General-purpose medium power for
switching and amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
2N6475
-110
VCBO
Collector-base voltage
2N6476
Open emitter
-130
V
2N6475
-100
VCEO
Collector-emitter voltage
2N6476
Open base
-120
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-4
A
IB
Base current
-2
A
PT
Total power dissipation
TC=25℃
40
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal resistance from junction to case
3.125
℃/W
Fig.1 simplified outline (TO-220) and symbol


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