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2SC1683 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC1683 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC1683 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; IB=0 150 V V(BR)CBO Collector-base breakdown voltage IC=0.5mA ; IE=0 200 V V(BR)EBO Emitter-base breakdown voltage IE=0.5mA ; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=500mA; IB=50mA 1.0 V VBE Base-emitter on voltage IC=400m A ; VCE=10V 1.0 V ICBO Collector cut-off current VCB=200V ;IE=0 50 μA IEBO Emitter cut-off current VEB=4V; IC=0 50 μA hFE DC current gain IC=400m A ; VCE=10V 60 200 hFE Classifications P Q 60-140 85-200 |
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