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2SC2358 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC2358 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC2358 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=10mA; IB=0 800 V V(BR)EBO Emitter-base breakdown voltage IE=1m A;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=5 A;IB=1 A 1.5 V VBEsat Base-emitter saturation voltage IC=5 A;IB=1 A 1.5 V ICBO Collector cut-off current VCB=1000V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE DC current gain IC=5A ; VCE=5V 15 |
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