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2SC3907 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3907 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page  Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3907 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 180 V VCEsat Collector-emitter saturation voltage IC=8 A;IB=0.8 A 0.3 2.0 V VBE Base-emitter voltage IC=7A ; VCE=5V 1.0 1.5 V ICBO Collector cut-off current VCB=180V; IE=0 5 μA IEBO Emitter cut-off current VEB=5V; IC=0 5 μA hFE-1 DC current gain IC=1A ; VCE=5V 55 180 hFE-2 DC current gain IC=7A ; VCE=5V 35 fT Transition frequency IC=1A ; VCE=5V 30 MHz COB Output capacitance IE=0; VCB=10V;f=1MHz 270 pF hFE-1 classifications R O 55-110 90-180 |
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