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2SD792 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD792 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD792 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0;L=25mH 700 V V(BR)EBO Emitter-base breakdown votage IE=10mA; IC=0 4 V VCEsat Collector-emitter saturation voltage IC=4.5 A;IB=2 A 1.5 V VBEsat Base-emitter saturation voltage IC=4.5 A;IB=2 A 1.5 V VCB=750V;IE=0 50 μA ICBO Collector cut-off current VCB=1500V;IE=0 1.0 mA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA hFE DC current gain IC=4A ; VCE=10V 4 12 tf Fall time 0.7 μs tstg Storage time IC=4A; IBend=1.8A; LB=10μH 13 μs 2 |
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