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2SD1729 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1729 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1729 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=500mA; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.8A 8.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.8A 1.5 V VCB=750V; IE=0 10 μA ICBO Collector cut-off current VCB=1500V; IE=0 1 mA hFE DC current gain IC=0.5A ; VCE=5V 5 25 fT Transition frequency IC=0.5A ; VCE=10V 2 MHz VF Diode forward voltage IF=-3.5A,IB=0 2.0 V Switching times ts Storage time 1.5 μs tf Fall time IC=3A; IB1=0.8A IB2=-1.6A VCC=200V 0.2 μs |
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