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BD131 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BD131
Description  Silicon NPN Power Transistors
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD131 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BD131 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BD131 Datasheet HTML 2Page - Inchange Semiconductor Company Limited BD131 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD131
DESCRIPTION
·
·Complement to type BD132
·With TO-126 package
·High current (Max: 3A)
·Low voltage (Max: 45V)
APPLICATIONS
·For general purpose power applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
70
V
VCEO
Collector-emitter voltage
Open base
45
V
VEBO
Emitter -base voltage
Open collector
6
V
IC
Collector current (DC)
3
A
ICM
Collector current-Peak
6
A
IBM
Base current-Peak
0.5
A
PT
Total power dissipation
Tmb≤60℃
15
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
Thermal resistance from junction to ambient
100
K/W
Rth j-mb
Thermal resistance from junction to mounting base
6
K/W


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