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2SB1390 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1390 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1390 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; RBE=∞ -60 V V(BR)CBO Collector-base breakdown voltage IC=-100μA; IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-50mA; IC=0 -7 V VCEsat-1 Collector-emitter saturation voltage IC=-4A ;IB=-8mA B -1.5 V VCEsat-2 Collector-emitter saturation voltage IC=-8A ;IB=-80mA B -3.0 V VBEsat-1 Base-emitter saturation voltage IC=-4A ;IB=-8mA B -2.0 V VBEsat-2 Base-emitter saturation voltage IC=-8A ;IB=-80mA B -3.5 V ICBO Collector cut-off current VCB=-50V; IE=0 -10 μA ICEO Collector cut-off current VCE=-50V; RBE=∞ -10 μA hFE DC current gain IC=-4A ; VCE=-3V 1000 20000 VD Diode forward voltage ID=8A 3.0 V 2 |
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