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2SB731 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB731 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB731 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=-1.0A; IB=-50mA -0.5 -0.6 V VBEsat Base-emitter saturation voltage IC=-1.0A; IB=-50mA -1.0 -1.2 V ICBO Collector cut-off current VCB=-50V; IE=0 -0.1 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -0.1 μA hFE-1 DC current gain IC=-0.1A ; VCE=-2V 135 600 hFE-2 DC current gain IC=-1A ; VCE=-1V 40 fT Transition frequency IC=-10mA ; VCE=-2V 75 MHz COB Collector output capacitance IE=0; f=1MHz ; VCB=-10V 25 pF hFE-1 Classifications L K F E 135-270 200-400 300-480 360-600 2 |
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