2SA733

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description

Designed for use in driver stage of AF amplifier

applicatioms.

Pinning

1 = Emitter

2 = Collector

3 = Base

TO-92

Dimensions in inches and (millimeters)

.022(0.56)

.014(0.36)

.050

(1.27)

.148(3.76)

.132(3.36)

Typ

.190(4.83)

.170(4.33)

.100

(2.54)

Typ

.050

(1.27)

Typ

.022(0.56)

.014(0.36)

.190(4.83)

.170(4.33)

.500

(12.70)

Min

3 2 1

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

-60

V

Collector-Emitter Voltage

-50

V

Emitter-Base Voltage

-5

V

Collector Current

-100

mA

Base Current

-20

mA

Total Power Dissipation

250

mW

Junction Temperature

+150

o

C

Storage Temperature

-55 to +150

o

C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector-Base Breakdown Voltage

-60

-

-

V

Collector-Emitter Breakdown Volatge

-50

-

-

V

Emitter-Base Breakdown Volatge

-5

-

-

V

Collector Cutoff Current

-

-

-0.1

µA

Emitter Cutoff Current

-

-

-0.1

µA

-

-0.18

-0.3

V

Base-Emitter On Voltage

-0.55

-0.62

-0.7

V

90

200

600

-

Transition Frequency

100

180

-

MHz

Output Capacitance

-

4.5

6

pF

Electrical Characteristics

(1)Pulse Test: Pulse Width

380

µs, Duty Cycle 2%

Rank

R

Q

P

K

Range

90~180

135~270

200~400

300~600