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2SA673 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SA673 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Elektronische Bauelemente 2SA673/673A PNP Silicon Plastic-Encapsulate Transistor http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual * RoHS Compliant Product * A suffix of "-C" specifies halogen-free * Low Frequency Amplifier * Complementary Pair with 2SC1213 and 2SC1213A M FEATURES 01-Jun-2002 Rev. A Page 1 of 2 2.54±0.1 (1.27 Typ.) 13 2 1: Emitter 2: Base 3: Collector 1.25±0.2 4.55±0.2 3.5±0.2 0.46±0.1 0.43+0.08 –0.07 TO-92 AXIMUM RATINGS (TA=25 C unless otherwise noted) ELECTRICAL CHARACTERISTICS (Tamb=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT * Pulse test. CLASSIFICATION OF hFE(1) Rank B D o 10 100- C o V C o C o Symbol Parameter Value Units VCBO Collector-Base Voltage 2SA673 2SA673A -35 -50 V VCEO Collector-Emitter Voltage 2SA673 2SA673A -35 -50 V VEBO Emitter-Base Voltage -4 IC Collector Current -Continuous -500 mA PC Collector Power dissipation 400 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 Collector-base breakdown voltage V(BR)CBO IC=-10µA,IE=0 2SA673 2SA673A -35 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 2SA673 2SA673A -35 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA,IC=0 -4 V Collector cut-off current ICBO VCB= -20 V, IE=0 -0.5 µA DC current gain hFE(1) * VCE=-3V, IC= -10mA 60 320 hFE(2) VCE=-3V, IC=-500mA Collector-emitter saturation voltage VCEsat * IC= -150mA, IB=-15mA -0.6 V Base-emitter voltage VBE VCE=-3V, IC=-10mA -0.64 V Range 60-120 200 160-320 |
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