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2SA684 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SA684 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page  Any changing of specification will not be informed individual 2SA684 PNP Transistor http://www.SeCoSGmbH.com Elektronische Bauelemente 1 2 TO-92L 1. EMITTER 2. COLLECTOR . BASE 2 3 1 3 3 FEATURES ∙ Automatic insertion by radial taping possible. ∙ Complementary pair with 2SC1384. MAXIMUM RATINGS* TA=25 ℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A PC Collector Dissipation 1 W TJ, Tstg Junction and Storage Temperature -55-150 ℃ *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-10uA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO Ic=-2mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA, IC=0 -5 V Collector cut-off current ICBO VCB=-20V, IE=0 -0.1 µA hFE(1) VCE=-10V, IC=-500mA 85 340 DC current gain hFE(2) VCE=-5V, IC=-1A 50 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.2 -0.4 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB=-50mA -0.85 -1.2 V Transition frequency fT VCE=-10V, IE=50mA, f=200MHz 200 MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 20 30 pF CLASSIFICATION OF hFE(1) Rank Q R S Range 85-170 120-240 170-340 01-Jun-2002 Rev. A Page 1 of 3 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free |
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