Electronic Components Datasheet Search
  New Zealand  ▼
ALLDATASHEET.CO.NZ

X  

Preview PDF HTML

SSM9435 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # SSM9435
Description  P-Channel Enhancement Mode Power Mos.FET
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSM9435 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

  SSM9435 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH SSM9435 Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH SSM9435 Datasheet HTML 3Page - SeCoS Halbleitertechnologie GmbH SSM9435 Datasheet HTML 4Page - SeCoS Halbleitertechnologie GmbH  
Zoom Inzoom in Zoom Outzoom out
 2 / 4 page
background image
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4
Notes: 1.
2.Pulse width 300us, dutycycle 2%.
≦
≦
3.Surface mounted on 1 in copper pad of FR4 board;120 C/W when mounted on min. copper pad.
2
o
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Forward On Voltage
Reverse Recovery Time
Trr
_
Reverse Recovery Change
_
Qrr
nC
nS
29
20
=-2.3A, VGS=0V.
=-5.3
VSD
_
_
IS
V
-1.2
2
_
_
IS
A, VGS=0V.
dl/dt=100A/us
9.2
2.8
5.2
11
8
25
17
507
222
158
nC
nS
pF
VGS=0V
VDS=-15V
f=1.0MHz
VDD=-15V
ID=-1A
VGS=-10V
RG=6
RD=15
Ω
Ω
ID=-5.3A
VDS=-24V
VGS=-4.5V
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
30
0.02
1.0
-3.0
100
-1
-25
50
100
±
V
V/
Reference to 25C, ID=-1mA
o
oC
V
nA
uA
uA
m
10
Ω
VGS=-10V, ID=- 5.3A
VGS=-4.5V, ID=-4.2A
VGS=0V, ID=-250uA
VGS= 25V
±
VDS=-30V,VGS=0
VDS=-24V,VGS=0
VDS=VGS, ID=-250uA
_
_
_
_
_
_
_
_
_
_
_
_
_
S
VDS=-10V, ID=-5.3A
_
_
-
-
-
16
912
_
_
_
_
Total Gate Charge
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
BVDS/ Tj
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current(Tj= 70 )
VGS(th)
IGSS
Forward Transconductance
Gfs
oC
oC
2
2
RDS(ON)
2
Source-Drain Diode
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Elektronische Bauelemente
SSM9435
-6A, -30V,RDS(ON) 50m
P-Channel Enhancement Mode Power Mos.FET
Ω
Electrical Characteristics( Tj=25 C Unless otherwise specified)
o
Pulse width limited by Max. junction temperature.



Html Pages

1 2 3 4


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com