Dated : 19/03/2009
SEMTECH ELECTRONICS LTD.
(
Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
ST 9012
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications. Especially
suitable for AF-driver stages and low power output
stages.
The transistor is subdivided into three groups, G,
H and I, according to its DC current gain. As
complementary type the NPN transistor 9013 is
recommended.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
-VCBO
40
V
Collector Emitter Voltage
-VCEO
30
V
Emitter Base Voltage
-VEBO
5
V
Collector Current
-IC
500
mA
Power Dissipation
Ptot
625
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
Tstg
- 55 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at -VCE = 1 V, -IC = 50 mA
Current Gain Group
at -VCE = 1 V, -IC = 500 mA
G
H
I
hFE
hFE
hFE
hFE
110
177
250
40
183
250
380
-
-
-
-
-
Collector Base Cutoff Current
at -VCB = 35 V
-ICBO
-
100
nA
Emitter Base Cutoff Current
at -VEB = 5 V
-IEBO
-
100
nA
Collector Base Breakdown Voltage
at -IC = 100 μA
-V(BR)CBO
40
-
V
Collector Emitter Breakdown Voltage
at -IC = 1 mA
-V(BR)CEO
30
-
V
Emitter Base Breakdown Voltage
at -IE = 100 μA
-V(BR)EBO
5
-
V
Collector Emitter Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
-VCE(sat)
-
0.6
V
Base Emitter Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
-VBE(sat)
-
1.2
V
Base Emitter Voltage
at -VCE = 1 V, -IC = 100 mA
-VBE
-
1
V
Gain Bandwidth Product
at -VCE = 6 V, -IC = 20 mA
fT
100
-
MHz
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
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