Dated : 29/08/2007
H
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
MBR1635 THRU MBR1660
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 35 to 60 V
Forward Current - 16 A
Features
• Metal silicon junction, majority carrier conduction
• Guard ring for overvoltage protection
• High current capability
• Low power loss, high efficiency
• Low forward voltage drop
• For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
Mechanical Data
• Case: Molded plastic, TO-220A
• Epoxy: UL 94V-0 rate flame retardant
• Terminals: Leads solderable per MIL-STD-202
Method 208 guaranteed
• Polarity: As marked
• Mounting position: Any
Maximum Ratings and Electrical Characteristics
Ratings at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Symbols MBR1635
MBR1645
MBR1650
MBR1660
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
35
45
50
60
V
Maximum RMS Voltage
VRMS
24
31
35
42
V
Maximum DC Blocking Voltage
VDC
35
45
50
60
V
Maximum Average Forward Rectified Current
TC = 125 OC
IF(AV)
16
A
Peak Repetitive Forward Current at TC = 125 OC
(Rated VR, Sq. Wave, 20 KHz)
IFRM
32
A
Peak Forward Surge Current, 8.3 ms Single Half Sine
Wave Superimposed on Rated Load (JEDEC Method)
IFSM
150
A
Peak Repetitive Reverse Current at tp = 2 µs, 1 KHz
IRRM
1
0.5
A
Maximum Forward Voltage
1)
at IF = 16 A, TC = 25 OC
at IF = 16 A, TC = 125 OC
VF
0.63
0.57
0.75
0.65
V
Maximum Reverse Current at Rated DC
Blocking Voltage
at TC = 25 OC
at TC = 125 OC
IR
0.2
40
1
50
mA
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/µs
Typical Thermal Resistance
RθJC
1.5
O
C/W
Operating Temperature Range
TJ
- 55 to + 150
O
C
Storage Temperature Range
TS
- 55 to + 175
O
C
1) Pulse test: 300 µs pulse width, 1% duty cycle
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