1 / 2 page
Dated : 02/12/2005
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
ST 2SC1815
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into four groups,
O, Y, G and L, according to its DC current
gain. As complementary type the PNP
transistor ST 2SA1015 is recommended.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
60
V
Collector Emitter Voltage
VCEO
50
V
Emitter Base Voltage
VEBO
5
V
Collector Current
IC
150
mA
Base Current
IB
50
mA
Power Dissipation
Ptot
400
mW
Junction Temperature
Tj
125
O
C
Storage Temperature Range
TS
-55 to +150
O
C
Characteristics at Tamb = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE=6V, IC=2mA
Current Gain Group
at VCE=6V, IC=150mA
O
Y
G
L
hFE
hFE
hFE
hFE
hFE
70
120
200
350
25
-
-
-
-
-
140
240
400
700
-
-
-
-
-
-
Collector Saturation Voltage
at IC=100mA, IB=10mA
VCE(sat)
-
-
0.25
V
Base Saturation Voltage
at IC=100mA, IB=10mA
VBE(sat)
-
-
1
V
Collector Cutoff Current
at VCB=60V
at VEB=5V
ICBO
IEBO
-
-
-
-
0.1
0.1
µA
µA
Gain Bandwidth Product
at VCE=10V, IC=1mA
fT
80
-
-
MHz
Output Capacitance
at VCB=10V, f=1MHz
COB
-
2
3
pF
Noise Figure
at VCE=6V, IC=0.1mA, f=1KHz, RG=10KΩ
NF
-
1
1
dB
New Zealand ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
