Dated : 27/06/2006
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
ST 1702
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications
The transistor is subdivided into five groups, L, M,
N, O and P, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
30
V
Collector Emitter Voltage
VCEO
25
V
Emitter Base Voltage
VEBO
5
V
Collector Current
IC
1
A
Power Dissipation
Ptot
600
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
- 55 to + 150
O
C
Characteristics at Tamb = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE = 1 V, IC = 100 mA
Current Gain Group
L
M
N
O
P
hFE
hFE
hFE
hFE
hFE
132
170
213
263
333
-
-
-
-
-
189
233
300
370
476
-
-
-
-
-
Collector Base Breakdown Voltage
at IC = 10 µA
V(BR)CBO
30
-
-
V
Collector Emitter Breakdown Voltage
at IC = 10 mA
V(BR)CEO
25
-
-
V
Emitter Base Breakdown Voltage
at IE = 100 µA
V(BR)EBO
5
-
-
V
Collector Cutoff Current
at VCB = 20 V
ICBO
-
-
0.1
µA
Emitter Cutoff Current
at VEB = 5 V
IEBO
-
-
0.5
µA
Collector Saturation Voltage
at IC = 500 mA, IB = 50 mA
VCE(sat)
-
-
0.7
V
Gain Bandwidth Product
at VCE = 5 V, IC = 10 mA
fT
-
100
-
MHz
Output Capacitance
at VCB = 5 V, f = 1 MHz
COB
-
12
-
pF
TO-92 Plastic Package
Weight approx. 0.19g
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