EIC3439-4

ISSUED DATED: 11/12/2007

3.40-3.90GHz 4-Watt Internally Matched Power FET

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

page 1 of 2

Revised November 2007

FEATURES

•

3.40–3.90GHz Bandwidth

•

Input/Output Impedance Matched to 50 Ohms

•

+36.5 dBm Output Power at 1dB Compression

•

12.0 dB Power Gain at 1dB Compression

•

35% Power Added Efficiency

•

-46 dBc IM3 at PO = 25.5 dBm SCL

•

Caution! ESD sensitive device.

SYMBOL

PARAMETERS/TEST CONDITIONS

1

MIN

TYP

MAX

UNITS

Output Power at 1dB Compression

f = 3.40-3.90GHz

35.5

36.5

dBm

Gain at 1dB Compression

f = 3.40-3.90GHz

11.0

12.0

dB

∆G

Gain Flatness

f = 3.40-3.90GHz

±0.6

dB

PAE

Power Added Efficiency at 1dB Compression

f = 3.40-3.90GHz

35

%

Drain Current at 1dB Compression

f = 3.40-3.90GHz

1200

1500

mA

IM3

Output 3rd Order Intermodulation Distortion

∆f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L

2

f = 3.90GHz

-43

-46

dBc

Saturated Drain Current

2000

2500

mA

Pinch-off Voltage

-2.5

-4.0

V

Thermal Resistance

3

5.5

6.0

Note: 1. Tested with 100 Ohm gate resistor.

2. S.C.L. = Single Carrier Level.

3. Overall Rth depends on case mounting.

ABSOLUTE MAXIMUM RATING FOR EFE

SYMBOLS

PARAMETERS

ABSOLUTE

1

CONTINUOUS

2

Drain-Source Voltage

15V

10V

Gate-Source Voltage

-5V

-4V

Igsf

Forward Gate Current

48.0 mA

14.4 mA

Igsr

Reverse Gate Current

-9.6 mA

-2.4 mA

Pin

Input Power

35.5dBm

@ 3dB Compression

Tch

Channel Temperature

175

175

Tstg

Storage Temperature

-65 to +175

-65 to +175

Pt

Total Power Dissipation

25W

25W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.