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Dated : 10/10/2008
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
MMBD202CC
SILICON EPITAXIAL PLANAR SWITCHING DIODE
Application
• Ultra high speed switching
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Maximum Peak Reverse Voltage
VRM
80
V
Reverse Voltage
VR
80
V
Average Forward Current
IO
100
mA
Maximum Peak Forward Current
IFM
300
mA
Surge Current (t = 1 µs)
IFSM
4
A
Power Dissipation
Ptot
200
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
Ts
- 55 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Max.
Unit
Forward Voltage
at IF = 100 mA
VF
1.2
V
Reverse Current
at VR = 70 V
IR
0.1
µA
Total Capacitance
at VR = 6 V, f = 1 MHz
CT
3.5
pF
Reverse Recovery Time
at VR = 6 V, IF = 5 mA, RL = 50 Ω
trr
4
ns
1
3
2
Marking Code: A4
SOT-23 Plastic Package
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