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PBLS2024D Datasheet(PDF) 8 Page - NXP Semiconductors |
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PBLS2024D Datasheet(HTML) 8 Page - NXP Semiconductors |
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8 / 16 page ![]() PBLS2024D_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 20 July 2009 8 of 16 NXP Semiconductors PBLS2024D 20 V, 1.8 A PNP BISS loadswitch VCE = −2V (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −55 °C Tamb =25 °C Fig 5. TR1 (PNP): DC current gain as a function of collector current; typical values Fig 6. TR1 (PNP): Collector current as a function of collector-emitter voltage; typical values VCE = −2V (1) Tamb = −55 °C (2) Tamb =25 °C (3) Tamb = 100 °C IC/IB =20 (1) Tamb = −55 °C (2) Tamb =25 °C (3) Tamb = 100 °C Fig 7. TR1 (PNP): Base-emitter voltage as a function of collector current; typical values Fig 8. TR1 (PNP): Base-emitter saturation voltage as a function of collector current; typical values 006aab511 400 200 600 800 hFE 0 IC (mA) −10−1 −104 −103 −1 −102 −10 (1) (2) (3) VCE (V) 0.0 −2.0 −1.5 −0.5 −1.0 006aab512 −1 −2 −3 IC (A) 0 IB (mA) = −16.0 −12.8 −14.4 −11.2 −9.6 −8.0 −4.8 −6.4 −3.2 −1.6 006aab513 −0.6 −0.8 −0.4 −1.0 −1.2 VBE (V) −0.2 IC (mA) −10−1 −104 −103 −1 −102 −10 (1) (2) (3) 006aab514 −0.6 −0.8 −0.4 −1.0 −1.2 VBEsat (V) −0.2 IC (mA) −10−1 −104 −103 −1 −102 −10 (1) (2) (3) |
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