SO

T-2

27

file # E145592

"UL Recognized"

G

S

S

D

N-Channel FREDFET

Absolute Maximum Ratings

Thermal and Mechanical Characteristics

G

D

S

Single die FREDFET

Unit

A

V

mJ

A

Unit

W

°C/W

°C

V

oz

g

in·lbf

N·m

Ratings

58

37

270

±30

1845

42

Min

Typ

Max

540

0.23

0.15

-55

150

2500

1.03

29.2

10

1.1

Parameter

Continuous Drain Current @ T

Continuous Drain Current @ T

Gate-Source Voltage

Avalanche Current, Repetitive or Non-Repetitive

Characteristic

Total Power Dissipation @ T

Junction to Case Thermal Resistance

Case to Sink Thermal Resistance, Flat, Greased Surface

Operating and Storage Junction Temperature Range

Package Weight

Terminals and Mounting Screws.

Symbol

I

D

I

DM

V

GS

E

AS

I

AR

Symbol

P

D

R

θJC

R

θCS

T

V

Isolation

W

T

Torque

TYPICAL APPLICATIONS

• ZVSphaseshiftedandotherfullbridge

•Halfbridge

•PFCandotherboostconverter

• Buckconverter

•Singleandtwoswitchforward

•Flyback

FEATURES

•FastswitchingwithlowEMI

•Lowtrrforhighreliability

•UltralowCrssforimprovednoiseimmunity

•Lowgatecharge

•Avalancheenergyrated

•RoHScompliant

APT58F50J

500V,58A,0.065

ΩMax,trr ≤320ns

APT58F50J

A proprietary planar stripe design yields excellent reliability and manufacturability. Low

tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

help control slew rates during switching, resulting in low EMI and reliable paralleling,

even when switching at very high frequency. Reliability in flyback, boost, forward, and

other circuits is enhanced by the high avalanche energy capability.

MicrosemiWebsite-http://www.microsemi.com