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APTCV60TLM991G Datasheet(PDF) 2 Page - Microsemi Corporation

Part # APTCV60TLM991G
Description  Three level inverter CoolMOS & Trench Field Stop IGBT Power Module
PDF  8 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTCV60TLM991G Datasheet(HTML) 2 Page - Microsemi Corporation

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APTCV60TLM991G
www.microsemi.com
2- 8
Q1 & Q4 Absolute maximum ratings
Q1 & Q4 Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
50
IDSS
Zero Gate Voltage Drain Current
VGS = 0V
VDS = 600V
Tj = 125°C
100
µA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 18A
99
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 1.2 mA
2.5
3
3.5
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
100
nA
Q1 & Q4 Dynamic Characteristics
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
2800
Coss
Output Capacitance
VGS = 0V ; VDS = 100V
f = 1MHz
130
pF
Qg
Total gate Charge
14
Qgs
Gate – Source Charge
20
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 400V
ID = 18A
60
nC
Td(on)
Turn-on Delay Time
10
Tr
Rise Time
5
Td(off)
Turn-off Delay Time
60
Tf
Fall Time
VGS = 10V
VBus = 400V
ID = 18A
RG = 3.3Ω
5
ns
RthJC
Junction to Case Thermal Resistance
1.15
°C/W
Q2 & Q3 Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
50
IC
Continuous Collector Current
TC = 80°C
30
ICM
Pulsed Collector Current
TC = 25°C
60
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
90
W
RBSOA Reverse Bias Safe Operating Area
TJ = 150°C
60A @ 550V
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
600
V
Tc = 25°C
22
ID
Continuous Drain Current
Tc = 80°C
17
IDM
Pulsed Drain current
75
A
VGS
Gate - Source Voltage
±20
V
RDSon
Drain - Source ON Resistance
99
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
110
W
IAR
Avalanche current (repetitive and non repetitive)
11
A
EAR
Repetitive Avalanche Energy
1.2
EAS
Single Pulse Avalanche Energy
800
mJ



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