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APTCV90TL12T3G Datasheet(PDF) 2 Page - Microsemi Corporation

Part # APTCV90TL12T3G
Description  Three level inverter CoolMOS & Trench Field Stop IGBT4 Power Module
PDF  9 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTCV90TL12T3G Datasheet(HTML) 2 Page - Microsemi Corporation

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APTCV90TL12T3G
www.microsemi.com
2- 9
Q1 & Q4 Absolute maximum ratings
Q1 & Q4 Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 900V
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 900V
Tj = 125°C
500
µA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 26A
100
120
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 3mA
2.5
3
3.5
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
100
nA
Q1 & Q4 Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
6800
Coss
Output Capacitance
VGS = 0V ; VDS = 100V
f = 1MHz
330
pF
Qg
Total gate Charge
270
Qgs
Gate – Source Charge
32
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 400V
ID = 26A
115
nC
Td(on)
Turn-on Delay Time
70
Tr
Rise Time
20
Td(off)
Turn-off Delay Time
400
Tf
Fall Time
Inductive Switching (125°C)
VGS = 10V
VBus = 400V
ID = 26A
RG = 7.5Ω
25
ns
RthJC
Junction to Case Thermal resistance
0.5
°C/W
Q2 & Q3 Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
80
IC
Continuous Collector Current
TC = 80°C
60
ICM
Pulsed Collector Current
TC = 25°C
100
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
280
W
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C
100A @ 1100V
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
900
V
Tc = 25°C
30
ID
Continuous Drain Current
Tc = 80°C
23
IDM
Pulsed Drain current
75
A
VGS
Gate - Source Voltage
±20
V
RDSon
Drain - Source ON Resistance
120
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
250
W
IAR
Avalanche current (repetitive and non repetitive)
8.8
A
EAR
Repetitive Avalanche Energy
2.9
EAS
Single Pulse Avalanche Energy
1940
mJ



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