APT30GP60B2DL_LDL(G)

DYNAMIC CHARACTERISTICS

Symbol

C

ies

C

oes

C

res

V

GEP

Q

g

Q

ge

Q

gc

SSOA

t

d(on)

t

r

t

d(off)

t

f

E

on1

E

on2

E

off

t

d(on)

t

r

t

d(off)

t

f

E

on1

E

on2

E

off

Test Conditions

Capacitance

V

f = 1 MHz

Gate Charge

V

V

I

T

15V, L = 100μH,V

Inductive Switching (25°C)

V

V

I

R

T

Inductive Switching (125°C)

V

V

I

R

T

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-to-Emitter Plateau Voltage

Gate-Emitter Charge

Gate-Collector ("Miller") Charge

Switching SOA

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

MIN

TYP

MAX

3200

295

20

7.5

90

20

30

120

13

18

55

46

260

335

250

330

13

18

84

80

260

508

518

750

UNIT

pF

V

nC

A

ns

ns

UNIT

°C/W

gm

MIN

TYP

MAX

.27

.88

5.90

Characteristic

Junction to Case (IGBT)

Junction to Case (DIODE)

Package Weight

Symbol

R

θ

JC

R

θ

JC

W

T

THERMAL AND MECHANICAL CHARACTERISTICS

1 Repetitive Rating: Pulse width limited by maximum junction temperature.

2 For Combi devices, I

3 See MIL-STD-750 Method 3471.

4 E

adding to the IGBT turn-on loss. (See Figure 24.)

5 E

loss. (See Figures 21, 22.)

6 E

Microsemi reserves the right to change, without notice, the specifications and information contained herein.