STE100N20 datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

THERMAL DATA

Rthj-case

Rthc-h

Thermal Resist ance Junct ion-case

Max

Thermal Resist ance Case-heatsink With Conduct ive

Grease Applied

Max

0.27

0.05

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

OFF

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID =1 mA

VGS = 0 V

200

IDSS

Zero Gate Volt age

Drain Current (VGS =0)

VDS =Max Rating

VDS = Max Rating x 0.8

Tc =125

400

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS =

± 20 V

± 400

ON (

∗)

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage VDS =VGS

ID =1 mA

RDS(on)

St atic Drain-source On

Resist ance

VGS =10V

ID = 60 A

0.021

Ω

DYNAMIC

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

gfs (

∗)Forward

Transconductance

VDS =15 V

ID =60 A

Ciss

Coss

Crss

I nput Capacitance

Output Capacit ance

Reverse Transfer

Capacitance

VDS = 25V

f = 1MHz

VGS =0 V

3200

1200

SWITCHING ON

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

td(on)

Turn-on Time

Rise Time

VDD =100 V

ID =50 A

RG =4.7

Ω

VGS =10 V

(see test circuit, figure 1)

140

(di/dt) on

Turn-on Current Slope

VDD = 160 V

ID = 100 A

RG =4.7

Ω

VGS =10 V

(see test circuit, figure 3)

480

µs

Total Gate Charge

VDD = 160 V

ID =100 A

VGS =10 V

505

STE100N20

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