2008. 12. 3

2/6

KF5N50DR/DS

Revision No : 0

ELECTRICAL CHARACTERISTICS (Tc=25℃)

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 4) Pulse Test : Pulse width ≤300㎲, Duty Cycle≤2%.

Note 5) Essentially independent of operating temperature.

2

PRODUCT NAME

LOT NO

1

801

2

KF5N50

DR

1

801

2

KF5N50

DS

1

Marking

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

500

-

-

V

Breakdown Voltage Temperature Coefficient

ΔBV

-

0.55

-

V/℃

Drain Cut-off Current

-

-

10

㎂

Gate Threshold Voltage

2.0

-

4.0

V

Gate Leakage Current

KF5N50DR

-

-

±100

nA

KF5N50DS

-

-

±10

㎂

Drain-Source ON Resistance

-

1.10

1.4

Ω

Dynamic

Total Gate Charge

(Note4,5)

-

12

-

nC

Gate-Source Charge

-

3.4

-

Gate-Drain Charge

-

4.5

-

Turn-on Delay time

(Note4,5)

-

23

-

ns

Turn-on Rise time

-

17

-

Turn-off Delay time

-

40

-

Turn-off Fall time

-

13

-

Input Capacitance

KF5N50DR

f=1.0MHz

-

510

-

pF

KF5N50DS

-

440

-

Output Capacitance

-

69

-

Reverse Transfer Capacitance

-

6

-

Source-Drain Diode Ratings

Continuous Source Current

-

-

5

A

Pulsed Source Current

-

-

20

Diode Forward Voltage

-

-

1.4

V

Reverse Recovery Time

dIs/dt=100A/㎲

-

150

-

ns

Reverse Recovery Charge

-

0.42

-

μC