MJ8501 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

MJ8501

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC=100mA ; IB=0

800

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 1A; IB= 0.33A

IC= 1A; IB= 0.33A,T

C=100℃

2.0

3.0

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 2.5A; IB= 1A

5.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= 1A; IB= 0.33A

IC= 1A; IB= 0.33A,T

C=100℃

1.5

ICEV

Collector Cutoff Current

VCEV=1400V;VBE(off)=1.5V

VCEV=1400V;VBE(off)=1.5V;TC=150℃

0.25

5.0

ICER

Collector Cutoff Current

VCE= 1400V; RBE= 50Ω,TC= 100℃

5.0

IEBO

Emitter Cutoff Current

VEB= 7.0V; IC=0

1.0

hFE

DC Current Gain

IC= 0.5A ; VCE= 5V

7.5

COB

Output Capacitance

IE= 0; VCB= 10V; ftest=1.0kHz

250

Switching times;Resistive Load

Delay Time

200

Rise Time

200

2000

Storage Time

1000

4000

Fall Time

IC= 1A , VCC= 500V;

IB1= 0.33A;tp= 50μs; VBE(off)= 5V

Duty Cycle≤2.0%

500

2000

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