STC4516

Complementary Dual Enhancement Mode MOSFET

8.5A for N Channel / -7.2A for P Channl

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

STC4516 2008 V1

ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted )

P-Channel

Parameter

Symbol

Typical

Unit

Drain-Source Voltage

-30

V

Gate-Source Voltage

+/-20

V

Continuous Drain Current

-7.2

-5.6

A

Pulsed Drain Current

-20

A

Continuous Source Current (Diode Conduction)

-2.3

A

Power Dissipation

2.8

1.8

W

Operation Junction Temperature

-55/150

℃

Storage Temperature Range

-55/150

℃

Thermal Resistance-Junction to Ambient

80

/W

℃

N-Channel

Parameter

Symbol

Typical

Unit

Drain-Source Voltage

30

V

Gate-Source Voltage

+/-20

V

Continuous Drain Current

8.5

7.5

A

Pulsed Drain Current

20

A

Continuous Source Current (Diode Conduction)

2.3

A

Power Dissipation

2.5

1.6

W

Operation Junction Temperature

-55/150

℃

Storage Temperature Range

-55/150

℃

Thermal Resistance-Junction to Ambient

80

/W

℃