MB91F467DA datasheet(97/140 Pages) FUJITSU

97 / 140 page

MB91460D Series

DS07-16612-2E

FLASH memory program/erase characteristics

6.1.

MB91F465DA

(TA = 25oC, Vcc = 5.0V)

*1: This value was converted from the results of evaluating the reliability of the technology (using Arrhenius

equation to convert high temperature measurements into normalized value at 85oC)

6.2.

MB91F467Dx

(TA = 25oC, Vcc = 5.0V)

*1: This value was converted from the results of evaluating the reliability of the technology (using Arrhenius

equation to convert high temperature measurements into normalized value at 85oC)

Parameter

Value

Unit

Remarks

Min

Typ

Max

Sector erase time

0.9

3.6

Erasure programming time not

included

Chip erase time

n*0.9

n*3.6

n is the number of Flash sector

of the device

Word (16-bit width) pro-

gramming time

370

μs

System overhead time not in-

cluded

Programme/Erase cycle

10 000

cycle

Flash data retention time

year

Parameter

Value

Unit

Remarks

Min

Typ

Max

Sector erase time

0.5

2.0

Erasure programming time not

included

Chip erase time

n*0.5

n*2.0

n is the number of Flash sector

of the device

Word (16 or 32-bit width)

programming time

100

μs

System overhead time not in-

cluded

Programme/Erase cycle

10 000

cycle

Flash data retention time

year

MB91F467DA Datasheet(PDF) 97 Page - fujitsu semiconductor

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