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MCP1804T-2502I/MB Datasheet(PDF) 23 Page - Microchip Technology

Part # MCP1804T-2502I/MB
Description  150 mA, 28V LDO Regulator With Shutdown
PDF  38 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MCP1804T-2502I/MB Datasheet(HTML) 23 Page - Microchip Technology

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© 2009 Microchip Technology Inc.
DS22200A-page 23
MCP1804
6.0
APPLICATION CIRCUITS AND
ISSUES
6.1
Typical Application
The MCP1804 is most commonly used as a voltage
regulator. It’s low quiescent current and wide input volt-
age make it ideal for Li-Ion and 12V battery-powered
applications.
FIGURE 6-1:
Typical Application Circuit.
6.1.1
APPLICATION INPUT CONDITIONS
6.2
Power Calculations
6.2.1
POWER DISSIPATION
The internal power dissipation of the MCP1804 is a
function of input voltage, output voltage and output
current. The power dissipation, as a result of the
quiescent current draw, is so low, it is insignificant
(50.0 µA x VIN). The following equation can be used to
calculate the internal power dissipation of the LDO.
EQUATION 6-1:
The maximum continuous operating temperature
specified for the MCP1804 is +85°C. To estimate the
internal junction temperature of the MCP1804, the total
internal power dissipation is multiplied by the thermal
resistance from junction to ambient (R
θ
JA). The thermal
resistance from junction to ambient for the SOT-25 pin
package is estimated at 256°C/W.
EQUATION 6-2:
The maximum power dissipation capability for a
package can be calculated given the junction-
to-ambient thermal resistance and the maximum
ambient temperature for the application. The following
equation can be used to determine the package
maximum internal power dissipation.
EQUATION 6-3:
EQUATION 6-4:
EQUATION 6-5:
Package Type
= SOT25
Input Voltage Range
= 3.8V to 4.2V
VIN maximum
= 4.6V
VOUT typical
= 1.8V
IOUT
=50 mA maximum
GND
VOUT
VIN
CIN
1µF
COUT
1 µF Ceramic
VOUT
VIN
4.2V
1.8V
IOUT
50 mA
Ceramic
SHDN
NC
P
LDO
V
IN MAX
)
()
V
OUT MIN
()
–
() I
OUT MAX
)
()
×
=
Where:
PLDO = LDO Pass device internal power
dissipation
VIN(MAX) = Maximum input voltage
VOUT(MIN) = LDO minimum output voltage
T
JMAX
()
P
TOTAL
R
θ
JA
×
T
AMAX
+
=
Where:
TJ(MAX)
=
Maximum continuous junction
temperature.
PTOTAL
=
Total device power dissipation.
RqJA
=
Thermal resistance from junction to
ambient.
TAMAX
=
Maximum ambient temperature.
P
DMAX
()
T
JMAX
()
T
AMAX
()
–
()
R
θ
JA
---------------------------------------------------
=
Where:
PD(MAX)
=
Maximum device power dissipation.
TJ(MAX)
=
Maximum continuous junction
temperature.
TA(MAX)
=
Maximum ambient temperature.
RqJA
=
Thermal resistance from junction to
ambient.
T
JRISE
()
P
DMAX
()
R
θ
JA
×
=
Where:
TJ(RISE)
=
Rise in device junction temperature over
the ambient temperature.
PTOTAL
=
Maximum device power dissipation.
RqJA
=
Thermal resistance from junction to
ambient.
T
J
T
JRISE
()
T
A
+
=
Where:
TJ
=
Junction Temperature.
TJ(RISE)
=
Rise in device junction temperature over
the ambient temperature.
TA
=
Ambient temperature.



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