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MCP1804T-2502I/MB Datasheet(PDF) 23 Page - Microchip Technology |
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MCP1804T-2502I/MB Datasheet(HTML) 23 Page - Microchip Technology |
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23 / 38 page ![]() © 2009 Microchip Technology Inc. DS22200A-page 23 MCP1804 6.0 APPLICATION CIRCUITS AND ISSUES 6.1 Typical Application The MCP1804 is most commonly used as a voltage regulator. It’s low quiescent current and wide input volt- age make it ideal for Li-Ion and 12V battery-powered applications. FIGURE 6-1: Typical Application Circuit. 6.1.1 APPLICATION INPUT CONDITIONS 6.2 Power Calculations 6.2.1 POWER DISSIPATION The internal power dissipation of the MCP1804 is a function of input voltage, output voltage and output current. The power dissipation, as a result of the quiescent current draw, is so low, it is insignificant (50.0 µA x VIN). The following equation can be used to calculate the internal power dissipation of the LDO. EQUATION 6-1: The maximum continuous operating temperature specified for the MCP1804 is +85°C. To estimate the internal junction temperature of the MCP1804, the total internal power dissipation is multiplied by the thermal resistance from junction to ambient (R θ JA). The thermal resistance from junction to ambient for the SOT-25 pin package is estimated at 256°C/W. EQUATION 6-2: The maximum power dissipation capability for a package can be calculated given the junction- to-ambient thermal resistance and the maximum ambient temperature for the application. The following equation can be used to determine the package maximum internal power dissipation. EQUATION 6-3: EQUATION 6-4: EQUATION 6-5: Package Type = SOT25 Input Voltage Range = 3.8V to 4.2V VIN maximum = 4.6V VOUT typical = 1.8V IOUT =50 mA maximum GND VOUT VIN CIN 1µF COUT 1 µF Ceramic VOUT VIN 4.2V 1.8V IOUT 50 mA Ceramic SHDN NC P LDO V IN MAX ) () V OUT MIN () – () I OUT MAX ) () × = Where: PLDO = LDO Pass device internal power dissipation VIN(MAX) = Maximum input voltage VOUT(MIN) = LDO minimum output voltage T JMAX () P TOTAL R θ JA × T AMAX + = Where: TJ(MAX) = Maximum continuous junction temperature. PTOTAL = Total device power dissipation. RqJA = Thermal resistance from junction to ambient. TAMAX = Maximum ambient temperature. P DMAX () T JMAX () T AMAX () – () R θ JA --------------------------------------------------- = Where: PD(MAX) = Maximum device power dissipation. TJ(MAX) = Maximum continuous junction temperature. TA(MAX) = Maximum ambient temperature. RqJA = Thermal resistance from junction to ambient. T JRISE () P DMAX () R θ JA × = Where: TJ(RISE) = Rise in device junction temperature over the ambient temperature. PTOTAL = Maximum device power dissipation. RqJA = Thermal resistance from junction to ambient. T J T JRISE () T A + = Where: TJ = Junction Temperature. TJ(RISE) = Rise in device junction temperature over the ambient temperature. TA = Ambient temperature. |
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