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PIC18F2420-E/P Datasheet(PDF) 333 Page - Microchip Technology

Part # PIC18F2420-E/P
Description  28/40/44-Pin Enhanced Flash Microcontrollers with 10-Bit A/D and nanoWatt Technology
PDF  412 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

PIC18F2420-E/P Datasheet(HTML) 333 Page - Microchip Technology

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© 2008 Microchip Technology Inc.
DS39631E-page 331
PIC18F2420/2520/4420/4520
Supply Current (IDD)(2)
PIC18LF2X2X/4X20
65
100
μA-40°C
VDD = 2.0V
FOSC = 1 MHz
(PRI_IDLE mode,
EC oscillator)
65
100
μA+25°C
70
110
μA+85°C
PIC18LF2X2X/4X20
120
140
μA-40°C
VDD = 3.0V
120
140
μA+25°C
130
160
μA+85°C
All devices 230
300
μA-40°C
VDD = 5.0V
235
300
μA+25°C
240
300
μA+85°C
Extended devices only
260
500
μA
+125°C
PIC18LF2X2X/4X20
260
360
μA-40°C
VDD = 2.0V
FOSC = 4 MHz
(PRI_IDLE mode,
EC oscillator)
255
360
μA+25°C
270
360
μA+85°C
PIC18LF2X2X/4X20
420
620
μA-40°C
VDD = 3.0V
430
620
μA+25°C
450
650
μA+85°C
All devices
0.9
1.2
mA
-40°C
VDD = 5.0V
0.9
1.2
mA
+25°C
0.9
1.2
mA
+85°C
Extended devices only
1
1.3
mA
+125°C
Extended devices only
2.8
6.0
mA
+125°C
VDD = 4.2V
FOSC = 25 MHz
(PRI_IDLE mode,
EC oscillator)
4.3
8.0
mA
+125°C
VDD = 5.0V
All devices
6.0
10
mA
-40°C
VDD = 4.2V
FOSC = 40 MHz
(PRI_IDLE mode,
EC oscillator)
6.2
10
mA
+25°C
6.6
10
mA
+85°C
All devices
8.1
13
mA
-40°C
VDD = 5.0V
9.1
12
mA
+25°C
8.3
12
mA
+85°C
26.2
DC Characteristics:
Power-Down and Supply Current
PIC18F2420/2520/4420/4520 (Industrial)
PIC18LF2420/2520/4420/4520 (Industrial) (Continued)
PIC18LF2420/2520/4420/4520
(Industrial)
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C
≤ TA ≤ +85°C for industrial
PIC18F2420/2520/4420/4520
(Industrial, Extended)
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40°C
≤ TA ≤ +85°C for industrial
-40°C
≤ TA ≤ +125°C for extended
Param
No.
Device
Typ
Max
Units
Conditions
Legend:
Shading of rows is to assist in readability of the table.
Note 1:
The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured
with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD or VSS and all features that
add delta current disabled (such as WDT, Timer1 Oscillator, BOR, etc.).
2:
The supply current is mainly a function of operating voltage, frequency and mode. Other factors, such as I/O pin
loading and switching rate, oscillator type and circuit, internal code execution pattern and temperature, also have
an impact on the current consumption.
The test conditions for all IDD measurements in active operation mode are:
OSC1 = external square wave, from rail-to-rail; all I/O pins tri-stated, pulled to VDD or VSS;
MCLR = VDD; WDT enabled/disabled as specified.
3:
When operation below -10°C is expected, use T1OSC High-Power mode, where LPT1OSC (CONFIG3H<2>) = 0.
When operation will always be above -10°C, then the low-power Timer1 oscillator may be selected.
4:
BOR and HLVD enable internal band gap reference. With both modules enabled, current consumption will be less
than the sum of both specifications.



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