EBJ41HE4BAFA

Data Sheet E1256E40 (Ver. 4.0)

15

AC Timing for IDD Test Conditions

For purposes of IDD testing, the following parameters are to be utilized.

DDR3-1333

DDR3-1066

DDR3-800

Parameter

9-9-9

7-7-7

6-6-6

Unit

CL (IDD)

9

7

6

tCK

tCK min.(IDD)

1.5

1.875

2.5

ns

tRCD min. (IDD)

13.5

13.13

15

ns

tRC min. (IDD)

49.5

50.63

52.5

ns

tRAS min.(IDD)

36

37.5

37.5

ns

tRP min. (IDD)

13.5

13.13

15

ns

tFAW (IDD)-

×4/×8

30

37.5

40

ns

tRRD (IDD)-

×4/×8

6.0

7.5

10

ns

tRFC (IDD)

110

110

110

ns

DC Characteristics 2 (TC = 0°C to +85°C, VDD, VDDQ = 1.5V

± 0.075V)

(DDR3 SDRAM Component Specification)

Parameter

Symbol

Value

Unit

Notes

Input leakage current

ILI

2

µA

VDD

≥ VIN ≥ VSS

Output leakage current

ILO

5

µA

DDQ

≥ VOUT ≥ VSS