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MGSF1P02 Datasheet(PDF) 1 Page - Weitron Technology |
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MGSF1P02 Datasheet(HTML) 1 Page - Weitron Technology |
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1 / 5 page ![]() WEITRON http://www.weitron.com.tw MGSF1P02 Rating Symbol Value Unit VDSS VGS ID IDM PD R JA 20 ±20 750 2000 400 300 Operating Junction and Storage Temperature Range TJ,Tstg -55 to 150 (t <10us) C V V mA mA mW C/W Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TA=25 C) Pulsed Drain Current(1) Power Dissipation (TA=25 C) Thermal Resistance Junction-to-Ambient Maximum Ratings (TA=25 C Unless Otherwise Specified) Device Marking MGSF1P02=PC Note 1: Pulse Width Limited by Maximum Junction Temperature Power MOSFET P-Channel 1 2 3 GATE SOURCE DRAIN SOT-23 1 2 3 Features: *Low On-Resistance : 0.35 Ω *Low Input Capacitance: 130 PF *Low Out put Capacitance : 120 PF *Low Threshole : 1.7V(TYE) *Fast Switching Speed : 2.5ns p θ _ |
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