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MMBD4448HTW Datasheet(PDF) 2 Page - Weitron Technology

Part # MMBD4448HTW
Description  Surface Mount Switching Multi-Chip Diode Array
PDF  4 Pages
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Manufacturer  WEITRON [Weitron Technology]
Direct Link  http://www.weitron.com.tw
Logo WEITRON - Weitron Technology

MMBD4448HTW Datasheet(HTML) 2 Page - Weitron Technology

  MMBD4448HTW Datasheet HTML 1Page - Weitron Technology MMBD4448HTW Datasheet HTML 2Page - Weitron Technology MMBD4448HTW Datasheet HTML 3Page - Weitron Technology MMBD4448HTW Datasheet HTML 4Page - Weitron Technology  
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WEITRON
http://www.weitron.com.tw
2/4
04-Jan-06
MMBD4448HAQW
MMBD4448HADW
MMBD4448HCDW
MMBD4448HSDW
MMBD4448HTW
Characteristic
Symbol
Value
Unit
100
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
80
V
RMS Reverse Voltage
VR(RMS)
57
V
Forward Continuous Current (Note 1)
IFM
500
mA
Average Rectified Output Current (Note 1)
IO
250
mA
Non-Repetitive Peak Forward Surge Current@ t = 1.0µs
@ t = 1.0s
IFSM
4.0
2.0
A
Power Dissipation (Note 1)
PD
200
mW
Thermal Resistant Junction to Ambient Air (Note 1)
RθJA
625
°C/W
Operating Temperature Range
Storage Temperature Range
Tj
TSTG
+150
-65 to +150
°C
°C
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Reverse Breakdown Voltage (Note 2)
IR = 100µA
80
-
V
Forward Voltage (Note 2)
IF = 5.0mA
IF = 10mA
IF = 100mA
IF = 150mA
0.62
-
-
-
0.72
0.855
1.0
1.25
V
-
100
50
30
25
nA
µA
µA
nA
Total Capacitance
VR = 6V, f = 1.0MHz
-
3.5
pF
-
4.0
ns
Maximum Ratings@ T
A= 25°C unless otherwise specified
Electrical Characteristics
Non-Repetitive Peak Reverse Voltage
Notes:1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch
VRM
Notes:2. Short duration test pulse used to minimize self-heating effect.
Reverse Current (Note 2)
VR = 70V
VR = 75V, Tj = 150°C
VR = 25V, Tj = 150°C
VR = 20V
Reverse Recovery Time
VR = 6V, IF= 5mA
V(BR)R
VF
IR
CT
Trr



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