SSF8521 datasheet(2/5 Pages) SILIKRON

2 / 5 page

SSF8521

©Silikron Semiconductor CO.,LTD

2008.12.1

Version : 1.1

page 2 of 5

A Good-Ark Company

MOSFET

Thermal Resistance, Junction-to-Ambient (Note 2)

RθJA

100

℃

ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=-250μA

-20

Zero Gate Voltage Drain Current

IDSS

VDS=-16V,VGS=0V

-1

μA

Gate-Body Leakage Current

IGSS

VGS=±8V,VDS=0V

±100

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250μA

-0.45

-1.2

VGS=-4.5V, ID=-3.2A

VGS=-2.5V, ID=-2.2A

110

Static Drain-Source On-Resistance

RDS(ON)

VGS=-1.8V, ID=-1.0A

120

170

mΩ

Forward Transconductance

gFS

VDS=-10V,ID=-2.9A

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

Clss

680

Output Capacitance

Coss

100

Reverse Transfer Capacitance

Crss

VDS=-10V,VGS=0V,

F=1.0MHz

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

td(on)

5.8

Turn-on Rise Time

11.7

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDD=-10V,ID=-3.2A

VGS=-4.5V,RGEN=2.4Ω

12.4

Total Gate Charge

7.4

Gate-Source Charge

Qgs

1.4

Gate-Drain Charge

Qgd

VDS=-10V,ID=-3.2A,VGS=-4.5V

2.5

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

VSD

VGS=0V,IS=-2.5A

-0.8

-1.2

Reverse Recovery Time

Trr

13.5

Reverse Recovery Charge

Qrr

VGS = 0 V, IS = −1.0 A ,

dIS/dt = 100 A/us

6.5

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