Analog Integrated Circuit Device Data

6

Freescale Semiconductor

33784

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

Bus Switch Resistance Matching

–

–

0.3

0.6

Ω

I/O0, I/O1, I/O2, and TEST Pull-down Current

5.0

–

20

μA

I/O0, I/O1, I/O2, and TEST Leakage Current

I/On, TEST = 0V

-10

–

10

μA

AN0, AN1 Pull-down Current (Enabled mode)

5.0

–

20

μA

AN0, AN1 Leakage Current (Disabled mode)(6)

-1.0

–

1.0

μA

BUSIN Logic Thresholds

Signal

Frame

2.8

5.5

3.0

6.0

3.2

6.5

V

BUSIN Hysteresis

Signal

Frame

60

100

–

–

120

300

mV

BUSIN Response Current

9.9

7.0

11

–

12.1

–

mA

BUSIN, BUSOUT Leakage Current

High Side Bus Switch Open

BUSIN = 25V, BUSOUT = 0V

BUSIN= 0V, BUSOUT = 16V

-20

–

20

μA

RTNIN, RTNOUT Leakage Current

Low Side Bus Switch Open

RTNIN = 14V, RTNOUT = 0V

RTNIN = 0V, RTNOUT = 16V

-20

-125

–

–

20

125

μA

RTNIN to BUSOUT Leakage Current

High Side Bus Switch Open

RTNIN = 14, BUSOUT 0V

-20

–

20

μA

ADC Resolution

10

10

10

bit

ANn Input Capacitance(7)

–

–

20

pF

Input Source Impedance(7)

–

–

5.0

k

Ω

ADC Code Conversion Error (INL)

Source Resistance < 1.0k

Ω

-3.5

–

+3.5

LSB

Full Scale Error

-3.5

–

+3.5

LSB

6.

In the default, AN0 pull-down current is disabled and AN1 pull-down current is enabled. AN1 pull-down current is disabled during AN1

A2D conversion. At the same time, AN0 pull-down current is enabled.

7.

Assured by design.

Table 3. Static Electrical Characteristics (continued)

Characteristics noted under conditions -0.3V

nominal conditions, unless otherwise noted.

Characteristic

Symbol

Min

Typ

Max

Unit