IRS2608DSPBF datasheet(7/23 Pages) IRF

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IRS2608DSPbF

Application Information and Additional Details

Informations regarding the following topics are included as subsections within this section of the datasheet.

•

IGBT/MOSFET Gate Drive

•

Switching and Timing Relationships

•

Deadtime

•

Matched Propagation Delays

•

Input Logic Compatibility

•

Undervoltage Lockout Protection

•

Shoot-Through Protection

•

Integrated Bootstrap Functionality

•

Negative VS Transient SOA

•

PCB Layout Tips

•

Additional Documentation

IGBT/MOSFET Gate Drive

The IRS2608D HVICs are designed to drive MOSFET or IGBT power devices.

Figures 1 and 2 illustrate several

parameters associated with the gate drive functionality of the HVIC. The output current of the HVIC, used to drive the

gate of the power switch, is defined as IO. The voltage that drives the gate of the external power switch is defined as

VHO for the high-side power switch and VLO for the low-side power switch; this parameter is sometimes generically called

VOUT and in this case does not differentiate between the high-side or low-side output voltage.

(or COM)

(or LO)

(or VCC)

IO+

VHO (or VLO)

(or COM)

(or LO)

(or VCC)

IO-

Figure 1: HVIC sourcing current

Figure 2: HVIC sinking current

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