IKCS12F60B2C datasheet(14/18 Pages) INFINEON

14 / 18 page

CIPOS™ IKCS12F60B2A

IKCS12F60B2C

Data Sheet

14/18

Rev. 2.2, March 2009

10A

15A

0.00mJ

0.25mJ

0.50mJ

0.75mJ

1.00mJ

1.25mJ

rec

off

25°C

50°C

75°C

100°C

125°C

0.00mJ

0.05mJ

0.10mJ

0.15mJ

rec

off

IC, COLLECTOR CURRENT

TvJ, JUNCTION TEMPERATURE

Figure 9. Typical switching energy losses

as a function of collector current

(inductive load, TvJ = 150°C,

VCE = 300V, VDD = 15V

Dynamic test circuit in Figure A)

Figure 10. Typical switching energy losses as

a function of junction temperature

(inductive load, VCE = 300V,

VDD = 15V, IC = 6A

Dynamic test circuit in Figure A)

-25°C

0°C

25°C

50°C

75°C

100°C

1kOhm

10kOhm

100kOhm

1000kOhm

min

typ

max

1µs

10µs 100µs

1ms

10ms 100ms

-2K/W

-1K/W

0K/W

Single Pulse

IGBT

Diode

TNTC, NTC TEMPERATURE

tP, PULSE WIDTH

Figure 11. Characteristic of NTC as a

function of NTC temperature

Figure 12. Transient thermal impedance as a

function of pulse width

(D=tP/T)

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