HM62V8100I datasheet(9/16 Pages) RENESAS

9 / 16 page

HM62V8100-I Series

Write Cycle

HM62V8100I

-5

Parameter

Symbol

Min

Max

Unit

Notes

Write cycle time

tWC

—

Address valid to end of write

tAW

—

Chip selection to end of write

tCW

—

Write pulse width

tWP

—

Address setup time

tAS

—

Write recovery time

tWR

—

Data to write time overlap

tDW

—

Data hold from write time

tDH

—

Output active from end of write

tOW

—

Output disable to output in High-Z

tOHZ

1, 2

Write to output in high-Z

tWHZ

1, 2

Notes: 1. tCHZ, tOHZ and tWHZ are defined as the time at which the outputs achieve the open circuit conditions and are not

referred to output voltage levels.

2. This parameter is sampled and not 100% tested.

3. At any given temperature and voltage condition, tHZ max is less than tLZ min both for a given device and from

device to device.

4. A write occures during the overlap of a low

CS1, a high CS2, a low WE. A write begins at the latest transition

among

CS1 going low, CS2 going high, WE going low. A write ends at the earliest transition among CS1

going high, CS2 going low,

WE going high. tWP is measured from the beginning of write to the end of write.

5. tCW is measured from the later of CS1 going low or CS2 going high to the end of write.

6. tAS is measured from the address valid to the beginning of write.

7. tWR is measured from the earliest of CS1 or WE going high or CS2 going low to the end of write cycle.

Rev.2.00, Nov.02.2009, page 9 of

HM62V8100I Datasheet(PDF) 9 Page - Renesas Technology Corp

HM62V8100I Datasheet(HTML) 9 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Datasheet Download

Link URL