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RJH60D2DPE Datasheet(PDF) 1 Page - Renesas Technology Corp

Part # RJH60D2DPE
Description  Silicon N Channel IGBT Application: Inverter
PDF  4 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJH60D2DPE Datasheet(HTML) 1 Page - Renesas Technology Corp

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REJ03G1842-0100 Rev.1.00 Oct 14, 2009
Page 1 of 3
Preliminary
RJH60D2DPE
Silicon N Channel IGBT
Application: Inverter
REJ03G1842-0100
Rev.1.00
Oct 14, 2009
Features
• High breakdown-voltage
• Low on-voltage
• Built-in diode
Outline
1. Gate
2. Collector
3. Emitter
4. Collecotor
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
1
2
3
4
C
G
E
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to emitter voltage / diode reverse voltage
VCES / VR
600
V
Gate to emitter voltage
VGES
±30
V
Tc = 25°C
IC
20
A
Collector current
Tc = 100°C
IC
10
A
Collector peak current
ic(peak)
Note1
40
A
Collector to emitter diode forward current
iDF
10
A
Collector to emitter diode forward peak current
iD(peak)
Note1
40
A
Collector dissipation
PC
Note2
90
W
Junction to case thermal impedance
θj-c Note2
1.39
°C/ W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25
°C


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